181 power f-mos fets unit: mm 2SK3024 silicon n-channel power f-mos fet features avalanche energy capacity guaranteed high-speed switching low on-resistance no secondary breakdown low-voltage drive high electrostatic breakdown voltage applications contactless relay diving circuit for a solenoid driving circuit for a motor control equipment switching power supply 1: gate 2: drain 3: source u-g1 package electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance diode forward voltage input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time (delay time) rise time fall time turn-off time (delay time) thermal resistance between channel and case thermal resistance between channel and atmosphere symbol i dss i gss v dss v th r ds(on)1 r ds(on)2 | y fs | v dsf c iss c oss c rss t d(on) t r t f t d(off) r th(ch-c) r th(ch-a) conditions v ds = 50v, v gs = 0 v gs = 20v, v ds = 0 i d = 1ma, v gs = 0 v ds = 10v, i d = 1ma v gs = 10v, i d = 10a v gs = 4v, i d = 10a v ds = 10v, i d = 10a i dr = 20a, v gs = 0 v ds = 10v, v gs = 0, f = 1mhz v dd = 30v, i d = 10a v gs = 10v, r l = 3 ? min 60 1 8 typ 33 44 12 330 290 70 20 125 520 1480 max 10 10 2.5 50 70 ? 1.5 6.25 125 unit a a v v m ? m ? s v pf pf pf ns ns ns ns c/w c/w absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 60 20 20 40 20 20 1 150 ? 55 to +150 unit v v a a mj w c c * l = 0.1mh, i l = 20a, 1 pulse internal connection g d s 6.5 0.1 2.3 0.1 (5.3) (4.35) (3.0) (1.8) (5.5) 0.75 0.1 2.3 0.1 4.6 0.1 1 123 3 2 0.5 0.1 1.0 0.1 0.1 0.05 0.5 0.1 0.8 max. 1.0 0.2 7.3 0.1 1.8 0.1 2.5 0.1 5.3 0.1 4.35 0.1
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